1 J. M. García et al., "InAs/InP(0 0 1) quantum wire formation due to anisotropic stress relaxation: in situ stress measurements", J. Cryst. Growth 227-228, 975 (2001); M. U. González et al., "Stress evolution aspects during InAs/InP (001) quantum wires self-assembling", Microelectron. J. 35, 13 (2004).
2 M. U. González et al., "Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements", Appl. Phys. Lett. 81, 4162 (2002); M. U. González et al., "In situ detection of an initial elastic relaxation stage during growth of In0.2Ga0.8As on GaAs(0 0 1)", Appl. Surf. Sci. 188, 128 (2002).
3 D. Fuster et al., "Stacking of InAs/InP(001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields", Appl. Phys. Lett. 84, 4723 (2004).
4 M. U. González et al., "In situ measurements of As/P exchange during InAs/InP(0 0 1) quantum wires growth", Appl. Surf. Sci. 188, 188 (2002); D. Fuster et al., "Size control of InAs/InP(001) quantum wires by tailoring P/As exchange", Appl. Phys. Lett. 85, 1424 (2004).
5. D. Fuster et al., "In situ measurements of InAs and InP (0 0 1) surface stress changes induced by surface reconstruction transitions", Surf. Sci. 600, 23 (2006).
6 M. U. González et al., "Design, near-field characterization, and modeling of 45° surface-plasmon Bragg mirrors", Phys. Rev. B 73, 155416 (2006); M. U. González et al., "Analysis of the angular acceptance of surface plasmon Bragg mirrors", Opt. Lett. 32, 2704 (2007); F. López-Tejeira et al., "Efficient unidirectional nanoslit couplers for surface plasmons", Nat. Phys. 3, 324 (2007).
7 J. Cesario et al., "Coupling localized and extended plasmons to improve the light extraction through metal films", Opt. Express 15, 10533 (2007); S. Massenot et al., "Polymer-metal waveguides characterization by Fourier plane leakage radiation microscopy", Appl. Phys. Lett. 91, 243102 (2007).
Born in 1973, María Ujué González graduated in Physics at Zaragoza University (Spain) in 1996. Then, she moved to Madrid, when in 2002 she obtained her PhD degree in Physics from the Universidad Complutense. Her PhD thesis research work, carried out at the Instituto de Microelectrónica de Madrid (IMM – CNM) under the supervision of prof. Luisa González and Dr. Yolanda González, was devoted to the in situ study of the evolution of the morphology and the relaxation processes during growth of III-V semiconductor heterostructures by molecular beam epitaxy. In particular, by means of in situ and in real time techniques, the complete relaxation process of low mismatch layers (In0.2Ga0.8As/GaAs) was determined [1] and the mechanism governing the formation of InAs/InP quantum wires was clarified [2]. The in situ stress monitoring technique has been revealed to be very useful also in the study of the stacking of InAs quantum wires [3], in the understanding of exchange processes during the wires growth [4] and in determining the surface stress associated with different surface reconstructions relevant during growth [5].
After her phD completion, Dr. M.U. González moved to the University of Burgundy (Dijon, France), where she spent a two year post-doctoral stay within the group of prof. Alain Dereux and prof. Jean-Claude Weeber focused on plasmonics. During these years, she participated in the development of optical elements for the propagation control of surface plasmon polaritons, mainly surface plasmon polariton Bragg mirrors [6]. In 2006, Dr. González joined the ICFO – Institute of Photonic Sciences, with a “Ramón y Cajal” fellowhip. At ICFO, she continued her activity on plasmonics and on the design of plasmon-based 2D miniaturized optical elements [7] within the group “Plasmon Nano-Optics”, lead by prof. Romain Quidant.
Dr. M.U. González has joined the Instituto de Microelectrónica de Madrid as a staff scientist in august 2008, where she has integrated in the magnetoplasmonics group. Her current research interests remain within the field of plasmonics, and she intends to analyze the feasibility of applying magnetoplasmonic materials to the development of active plasmonic devices.
